Magnetic-field-induced localization transition in HgCdTe.
نویسندگان
چکیده
We have performed magnetoresistance and Hall-resistance measurements on low —carrierconcentration n-type samples of Hg076Cdp24Te at millikelvin temperatures. We observe an abrupt rise in the Hall resistance and magnetoresistance at a characteristic field H, which is a significant function of temperature and which allows us to reject magnetic freezeout or localization by disorder as possible mechanisms. We believe our data provide compelling evidence for a model where the magnetic field induces localization of the electrons into a three-dimensional Wigner lattice.
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ورودعنوان ژورنال:
- Physical review letters
دوره 54 3 شماره
صفحات -
تاریخ انتشار 1985